tp0101t/ts vishay siliconix document number: 70229 s-04279?rev. d, 16-jul-01 www.vishay.com 11-1 p-channel 20-v (d-s) mosfet, low-threshold
i d (a) v ds (v) r ds(on) ( ) tp0101t tp0101ts 0.65 @ v gs = ?4.5 v ?0.6 ?1.0 ?20 0.85 @ v gs = ?2.5 v ?0.5 ?0.9
high-side switching low on-resistance: 0.45 low threshold: 0.9 v (typ) fast switching speed: 32 ns 2.5-v or lower operation ease in driving switches low offset (error) voltage low-voltage operation high-speed circuits low battery voltage operation drivers: relays, solenoids, lamps, hammers, displays, memories battery operated systems, dc/dc converters power supply converter circuits load/power switching?cell phones, pagers g s d top view 2 3 to-236 (sot-23) 1 marking code: tp0101t: po wll tp0101ts: ps wll w = week code l = lot traceability
parameter symbol tp0101t tp0101ts c unit drain-source voltage v ds ?20 ?20 gate-source voltage v gs 8 8 v t a = 25 c ?0.6 ?1.0 continuous drain current (t j = 150 c) b t a = 70 c i d ?0.48 ?0.8 pulsed drain current a i dm ?3 ?3 a continuous source current (diode conduction) b i s ?0.6 ?1.0 t a = 25 c 0.35 1.0 power dissipation b t a = 70 c p d 0.22 0.65 w operating junction and storage temperature range t j , t stg ?55 to 150 ?55 to 150 c
parameter symbol tp0101t tp0101ts c unit thermal resistance, junction-to-ambient b r thja 357 125 c/w notes a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 10 sec. c. copper lead frame.
tp0101t/ts vishay siliconix www.vishay.com 11-2 document number: 70229 s-04279 ? rev. d, 16-jul-01
limits parameter symbol test conditions min typ max unit static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = ? 10 a ? 20 ? 26 gate-threshold voltage v gs(th) v ds = v gs , i d = ? 50 a ? 0.5 ? 0.9 ? 1.5 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na v ds = ? 9.6 v, v gs = 0 v ? 1 zero gate voltage drain current i dss t j = 55 c ? 10 a v ds ? 5 v, v gs = ? 4.5 v ? 2.5 on-state drain current a i d(on) v ds ? 5 v, v gs = ? 2.5 v ? 0.5 a v gs = ? 4.5 v, i d = ? 0.6 a 0.45 0.65 drain-source on-resistance a r ds(on) v gs = ? 2.5 v, i d = ? 0.5 a 0.69 0.85 forward transconductance a g fs v ds = ? 5 v, i d = ? 0.6 a 1300 ms diode forward voltage a v sd i s = ? 0.6 a, v gs = 0 v ? 0.9 ? 1.2 v dynamic total gate charge q g 2020 3000 gate-source charge q gs v ds = ? 6 v, v gs = ? 4.5 v i d ? 0.6 a 180 pc gate-drain charge q gd i d ? 0.6 a 720 input capacitance c iss 110 output capacitance c oss v ds = ? 6 v, v gs = 0, f = 1 mhz 80 pf reverse transfer capacitance c rss 30 switching t d(on) 7 12 turn-on time t r v dd = ? 6 v, r l = 12 25 35 t d(off) i d ? 0.6 a, v gen = ? 4.5 v r g = 6 19 30 ns turn-off time t f 9 15 notes a. pulse test: pw 300 s duty cycle 2%. vplj01
tp0101t/ts vishay siliconix document number: 70229 s-04279 ? rev. d, 16-jul-01 www.vishay.com 11-3 ?? ?? on-resistance vs. drain current output characteristics transfer characteristics v ds ? drain-to-source voltage (v) v gs ? gate-to-source voltage (v) 0 1 2 3 4 5 6 01234 0.0 0.5 1.0 1.5 2.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 25 c t a = ? 55 c 125 c ? 2.5 v ? 3 v v gs = ? 5 v ? 1.5 v ? 2 v 0 50 100 150 200 250 300 350 036912 0.7 0.9 1.1 1.3 1.5 1.7 ? 50 0 50 100 150 0 1 2 3 4 5 6 7 0 600 1200 1800 2400 3000 0 1 2 3 4 012345 gate charge q g ? total gate charge (pc) v ds ? drain-to-source voltage (v) c oss c rss c iss v ds = ? 6 v i d = ? 0.5 a i d ? drain current (a) capacitance on-resistance vs. junction temperature v gs = ? 4.5 v i d = ? 0.5 a t j ? junction temperature ( c) v gs = ? 2.5 v v gs = ? 4.5 v ? 0.5, 1 v ? 3.5 v ? 4 v ? 4.5 v i d ? drain current (a) i d ? drain current (a) c ? capacitance (pf) r ds(on) ? drain-source on-resistance ( ? ) v gs ? gate-to-source voltage (v) r ds(on) ? on-resistance ( ? ) ( normalized) ? ? ? ? ? ? ? ? ? ? ?????? ? ? ? ? ? ?? ?? ? v gs = 0 f = 1 mhz ?? ?? ? ? ? ? ? ?
tp0101t/ts vishay siliconix www.vishay.com 11-4 document number: 70229 s-04279 ? rev. d, 16-jul-01 0.0 0.5 1.0 1.5 2.0 2.5 ? 0.16 ? 0.06 0.04 0.14 0.24 0.34 ? 50 0 50 100 150 0.0 0.5 1.0 1.5 2.0 2.5 3.0 012345 source-drain diode forward voltage on-resistance vs. gate-to-source voltage threshold voltage single pulse power normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) 2 1 0.1 0.01 10 ? 4 10 ? 3 10 ? 2 10 ? 1 1 normalized effective transient thermal impedance 30 v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) t j ? junction temperature ( c) time (sec) 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 i d = ? 50 a i d = ? 0.5 a 10 1 0.1 0.01 0.001 0.01 0.1 1 100 10 10 t j = 50 c t j = 25 c t a = 25 c single pulse 8 6 4 2 0 10 i s ? source current (a) r ds(on) ? on-resistance ( ? ) v gs(th) ? variance (v) ? ? ? ? ????? ?????
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